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| MMBTA92 High-Voltage PNP Transistor Surface Mount P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 Value -3 0 0 -3 0 0 -5 . 0 -5 0 0 Unit Vdc Vdc Vdc m Adc Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous Symbol V CE O V CB O VE B O IC Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient Total Device Dis s ipation Alum ina S ubs trate, (2 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient J unction and S torage, Tem perature Symbol PD R JA PD R JA T J, Ts tg Max 225 1.8 556 300 2.4 417 -5 5 to +1 5 0 Unit mW m W/ C C/ W mW m W/ C C/ W C Device Marking MMB T A92=2D Electrical Characteristics (TA=25C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-E m itter B reakdown Voltage (3 ) (I C =-1 . 0 m Adc. IB =0 ) Collector-B as e B reakdown Voltage (I C =-1 0 0 Adc, I E =0 ) E m itter-B as e B reakdown Voltage (I E =-1 0 Adc, I C =0 ) Collect Cutoff Current (V CB = -2 0 0 Vdc, I E =0 ) E m itte Cutoff Current (V E B =3 V, I C =0 ) 1 . FR -5 =1 . 0 x 0 . 7 5 x 0 . 0 6 2 in. 2 . Alum ina=0 . 4 x 0 . 3 x 0 . 0 2 4 in. 9 9 . 5 % alum ina. 3 . P uls e Tes t: P uls e Width 3 0 0 S , Duty Cycle 2 . 0 % . V(B R )CE O V(B R )CB O V(B R )E B O I CB O IE B O -3 0 0 -3 0 0 -5 . 0 -0 . 2 5 -0 . 1 Vdc Vdc Vdc Adc Adc - WEITRON http://www.weitron.com.tw 1/4 23-Sep-05 MMBTA92 Electrical Characteristics (TA=25C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE= -10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -30 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (3) (IC= -20 mAdc, IB= -2.0mAdc) Base-Emitter Saturation Voltage (3) (IC= -20 mAdc, IB= -2.0 mAdc) Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -5 Vdc, f=30MHz) HFE(1) HFE(2) HFE(3) VCE(sat) VBE(sat) fT 25 100 25 - 200 0.5 - Vdc - 0.9 Vdc MHz 50 - WEITRON http://www.weitron.com.tw 2/4 23-Sep-05 MMBTA92 Typical Characteristics 120 hFE, DC CURRENT GAIN 100 80 60 40 Tj=+125 C 25 C -55 C 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1, DC Current Gain 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 00 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V Figure 2, "On"Voltages fT, CURRENT-GAIN-BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 TJ = 25C VCE = 20Vdc F = 20MHz 7 9 11 13 15 17 19 21 Ic, COLLECTOR CURRENT (mA) Figure 3, Current-Gain- Bandwidth WEITRON http://www.weitron.com.tw 3/4 23-Sep-05 MMBTA92 SOT-23 Package Outline Dimension SOT-23 A TOP VIEW B C D E G H K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 23-Sep-05 |
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